BALLISTIC-ELECTRON-EMISSION MICROSCOPY AND SPECTROSCOPY OF THE AU GAAS(110) INTERFACE/

Authors
STOCKMAN L VANKEMPEN H
Citation
L. Stockman et H. Vankempen, BALLISTIC-ELECTRON-EMISSION MICROSCOPY AND SPECTROSCOPY OF THE AU GAAS(110) INTERFACE/, Surface science, 408(1-3), 1998, pp. 232-236
Citations number
7
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
408
Issue
1-3
Year of publication
1998
Pages
232 - 236
Database
ISI
SICI code
0039-6028(1998)408:1-3<232:BMASOT>2.0.ZU;2-W
Abstract
Ballistic electron emission microscopy (BEEM) was used to study the Au /GaAs(110) interface, where the GaAs(110) surface was prepared by clea ving. We were able to prepare Schottky barriers characterized by a hig h homogeneity. Moreover, the interface, formed on the (110) cleavage p lane of a GaAs(100) wafer, transmits ballistic electrons for months wi thout any significant deterioration in contrast to the Schottky barrie rs prepared on chemically cleaned GaAs(100). (C) 1998 Elsevier Science B.V. All rights reserved.