ADSORPTION STRUCTURES OF TE ON SI(001) SURFACE OBSERVED BY LOW-ENERGY-ELECTRON DIFFRACTION

Citation
K. Tamiya et al., ADSORPTION STRUCTURES OF TE ON SI(001) SURFACE OBSERVED BY LOW-ENERGY-ELECTRON DIFFRACTION, Surface science, 408(1-3), 1998, pp. 268-274
Citations number
12
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
00396028
Volume
408
Issue
1-3
Year of publication
1998
Pages
268 - 274
Database
ISI
SICI code
0039-6028(1998)408:1-3<268:ASOTOS>2.0.ZU;2-N
Abstract
Adsorption structures of Te on a Si(001) surface have been investigate d by low energy electron diffraction (LEED), thermal desorption spectr oscopy and Auger electron spectroscopy. After the deposition of Te ato ms > 3 monolayer (ML) on a single-domain Si(001)-(1 x 2) surface at ro om temperature, a LEED pattern corresponding to a (10 (1) over bar 0) surface of Te bulk crystal appeared. Raising the substrate temperature , Te atoms in excess of 1 ML desorbed at about 350 degrees C and a (1 x 1)structure appeared. Furthermore, (2 x 1) and (1 x 3) structures ap peared at about 600 and 680 degrees C, and amounts of Te atoms in thes e structures were about 1 and 2/3 ML, respectively. Finally, Te atoms desorbed at about 800 degrees C completely. (C) 1998 Elsevier Science B.V. All rights reserved.