GROWTH OF C-60 SINGLE-CRYSTAL FILMS ON METAL SUBSTRATES

Citation
Jg. Hou et al., GROWTH OF C-60 SINGLE-CRYSTAL FILMS ON METAL SUBSTRATES, Thin solid films, 320(2), 1998, pp. 179-183
Citations number
19
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
320
Issue
2
Year of publication
1998
Pages
179 - 183
Database
ISI
SICI code
0040-6090(1998)320:2<179:GOCSFO>2.0.ZU;2-D
Abstract
High-quality C-60(111) single crystal films have been grown on Ni3Fe(1 11), Ni3Co(111) and Ni3Fe(110) surfaces using hot-wall diffusion metho d. X-ray diffraction results show that well-ordered films can be obtai ned near 150 degrees C on these substrates. The high quality of the fi lms could be attributed to the perfect lattice match between C-60 film and substrates, low growth rate of C-60, and the suitable substrate t emperature. (C) 1998 Elsevier Science S.A. All rights reserved.