PREPARATION OF C-BN FILMS BY RF-SPUTTERING AND THE RELATION OF BN PHASE-FORMATION TO THE SUBSTRATE BIAS AND TEMPERATURE

This paper deals with the deposition of cubic boron nitride (c-BN) fil ms by radio frequency (RF) magnetron sputtering. The nearly pure c-BN films have been prepared on Si(100) substrates using hexagonal boron n itride (h-BN) targets. Argon gas mixed with nitrogen gas was used as s puttering gas. The deposited Films were characterized by Fourier trans form infrared (FTIR) spectroscopy and transmission electron diffractio n (TED). A 'temperature-bias' phase diagram has been worked out. It in dicates that the c-BN phase prefers the relative high temperature and negative bias. An opinion was presented that the c-BN nuclei grow disc ontinuously with every time the 'thermal spike' coming. (C) 1998 Elsev ier Science S,A, All rights reserved.