FORMATION OF DYSPROSIUM SILICIDE WIRES ON SI(001)

Authors
PREINESBERGER C VANDRE S KALKA T DAHNEPRIETSCH M
Citation
C. Preinesberger et al., FORMATION OF DYSPROSIUM SILICIDE WIRES ON SI(001), Journal of physics. D, Applied physics, 31(12), 1998, pp. 43-45
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
Journal of physics. D, Applied physics → ACNP
ISSN journal
00223727
Volume
31
Issue
12
Year of publication
1998
Pages
43 - 45
Database
ISI
SICI code
0022-3727(1998)31:12<43:FODSWO>2.0.ZU;2-F
Abstract
We present scanning tunnelling microscopy results of thin dysprosium s ilicide films grown on Si(001) 2x1. At submonolayer coverages, up to 2 000 Angstrom long wires are formed in the (110) direction of the Si(00 1) surface. Depending on Dy exposure and annealing conditions, both wi re assemblies and free-standing wires can be grown. At higher coverage s, three-dimensional clusters with rectangular shapes are formed.