APPROACH TO FORMATION OF ULTRA-PURE METAL-FILMS BY MEANS OF ION-BEAM TECHNOLOGY

Citation
A. Chayahara et al., APPROACH TO FORMATION OF ULTRA-PURE METAL-FILMS BY MEANS OF ION-BEAM TECHNOLOGY, Physica status solidi. a, Applied research, 167(2), 1998, pp. 405-410
Citations number
4
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
00318965
Volume
167
Issue
2
Year of publication
1998
Pages
405 - 410
Database
ISI
SICI code
0031-8965(1998)167:2<405:ATFOUM>2.0.ZU;2-7
Abstract
In order to obtain very pure metal films, ion beam technology is a mos t sophisticated method. Theoretically, it offers more purl materials t han other methods. The combination of a mass-analyzing process and an ultra-high vacuum environment will achieve it. However, in practice it is not so easy to put together such a process, because gaseous impuri ties will be generated at a conventional ion source where a plasma dis charge usually exists. In order to produce ultra-pure metal films, we have proposed three ion beam technologies, namely,'self sputtering dep osition'. 'droplet-free vacuum are source' and 'direct ion beam deposi tion'.