MODELING THE OPERATION OF AN A-SI-H BASED POSITION-SENSITIVE DETECTOR

Authors
GEORGIEV SS NEDEV N SUEVA D TONEVA A
Citation
Ss. Georgiev et al., MODELING THE OPERATION OF AN A-SI-H BASED POSITION-SENSITIVE DETECTOR, Journal of physics. Condensed matter, 10(25), 1998, pp. 5515-5524
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
Journal title
Journal of physics. Condensed matter → ACNP
ISSN journal
09538984
Volume
10
Issue
25
Year of publication
1998
Pages
5515 - 5524
Database
ISI
SICI code
0953-8984(1998)10:25<5515:MTOOAA>2.0.ZU;2-E
Abstract
A physical model is presented which allows calculation of the carrier and potential distributions and the output voltage of a one dimensiona l position sensitive detector based on an ITO/a-Si:H/Pd structure. The calculation results are in agreement with those experimentally measur ed. Using the experimental data the effective electron diffusion lengt h in the ITO layer is estimated to be about 0.65 cm. The effect of sur face recombination on the device characteristics is studied by a numer ical method.