Authors
Citation
Dc. Reynolds et al., SCREENING OF EXCITONS IN GAN CRYSTALS, Journal of physics. Condensed matter, 10(25), 1998, pp. 5577-5581
Citations number
20
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
09538984
Volume
10
Issue
25
Year of publication
1998
Pages
5577 - 5581
Database
ISI
SICI code
0953-8984(1998)10:25<5577:SOEIGC>2.0.ZU;2-J
Abstract
A study was made of the screening of excitons in a GaN sample, which w
as simultaneously excited with a HeCd laser and an Ar+ ion laser. The
Ar+ ion laser excites carriers in a two step process, involving an imp
urity or defect. A comparison with transport measurements shows that t
he photoluminescence is probably emitted from a higher-quality portion
of the sample than that which conducts the current.