This paper describes a simulator which can be used to study the effect
s on circuit behaviour of two radiation phenomena: Single Event Upset
(SEU) and total-dose radiation effects. The core of the device is BERT
(BErkeley Reliability Tools), an IC reliability simulator. The SEU si
mulator uses an established methodology, but a novel choice of sensiti
ve nodes is made, which allows a fast simulation of very large digital
circuits. The total-dose simulator predicts circuit behaviour after a
user-specified radiation dose using an ordinary circuit simulator, su
ch as SPICE. Simulation results are compared to actual experimental da
ta.