GAAS MOSFET USING MBE-GROWN GA2O3 (GD2O3) AS GATE OXIDE

An enhancement mode GaAs metaloxide-semiconductor field effect transis tor (MOSFET) with Ga2O3 (Gd2O3) as gate dielectric has been successful ly fabricated. The low interface density Ga2O3 (Gd2O3) oxide and GaAs n-channel layer were grown by in situ molecular beam epitaxy (MBE). Th e fabricated n-channel MOSFET with 20 nm-thick oxide and 2 mu m-long g ate operated both in enhancement and depletion modes, with a peak tran sconductance of 40 mS/mm in the enhancement mode. While operating with gate voltages ranging from -1 to 5V, the device showed a drain curren t drift of 10.5% for a duration of 10(4)s, a limited amount of hystere sis and negligible dispersion of transconductance from 10Hz to 1MHz.