WET-ETCH PROCESS IMPROVEMENTS THROUGH SPC

Authors
Citation
Ds. Taylor, WET-ETCH PROCESS IMPROVEMENTS THROUGH SPC, Solid state technology, 41(7), 1998, pp. 119
Citations number
28
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
ISSN journal
0038111X
Volume
41
Issue
7
Year of publication
1998
Database
ISI
SICI code
0038-111X(1998)41:7<119:WPITS>2.0.ZU;2-R
Abstract
Wet etching is an isotropic process and difficult to control, but prop er application of statistical process control (SPC) can significantly reduce variability. A relatively simple SPC model predicts the tempera ture required to achieve a desired etch rate from the rate at two othe r temperatures, despite the nonlinear dependence upon temperature. Exc ess wet etch scrap can be reduced without the expensive switch to plas ma etching.