BARRIER AND SEED LAYERS FOR DAMASCENE COPPER METALLIZATION

Authors
CHIN B DING PJ SUN BX CHIANG T ANGELO D HASHIM I XU Z EDELSTEIN S CHEN FS
Citation
B. Chin et al., BARRIER AND SEED LAYERS FOR DAMASCENE COPPER METALLIZATION, Solid state technology, 41(7), 1998, pp. 141
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid state technology → ACNP
ISSN journal
0038111X
Volume
41
Issue
7
Year of publication
1998
Database
ISI
SICI code
0038-111X(1998)41:7<141:BASLFD>2.0.ZU;2-D
Abstract
Electroplating copper interconnects requires the deposition of barrier and seed layers by some other method. Ionized physical vapor depositi on (PVD) produces thin, conformal, continuous tantalum-based barriers and copper seed layers inside small structures. Increasing nitrogen co ntent in TaNx films improves barrier properties. Marathon tests proved the deposition processes are production worthy.