MODEL-BASED ANALYSIS FOR PRECISE AND ACCURATE EPITAXIAL SILICON MEASUREMENTS

New model-based, Fourier transform infrared (FTIR) spectroscopy epitax ial silicon characterization techniques have significantly better accu racy and precision than current techniques. They also provide addition al information about the doping profile. The new methods improve preci sion by a factor of 10, and accuracy by a factor of 2-10, extending th e range of epi film characterization below 0.25 mu m. With today's com puters, this technique is fast enough for in-line applications with no degradation of system throughput, allowing for real-time process cont rol.