The temperature dependence of domain wall coercive field, H-CW, of an
epitaxial magnetic rare earth garnet film was modified by covering die
garnet layer with sputtered SiO2. The result supports a recent model
of domain wall coercivity. According to this model die typical shape o
f the H-CW(T) curves originate ill die temperature dependence of the a
nisotropy field, modified by several efficiency functions of the wall-
defect interaction. The efficiency functions reflect predominance of d
ifferent sets of sample defects within different temperature regions.
Introduction of some extra stress, due to die sputtered SiO2, changed
the wall-defect interaction in a certain ranee of temperatures and alt
ered there the shape of the H-CW(T) curve. Characteristics of the orig
inal system of defects and estimates of those: for thr modified sample
are presented.