Iv. Grekhov et al., OPERATION OF A BIPOLAR-TRANSISTOR WITH A TUNNEL MOS EMITTER AND AN INDUCED BASE FROM 4.2 TO 300 K, Cryogenics, 38(6), 1998, pp. 613-618
We demonstrate for the first time the capability of tunnel MOS emitter
transistors to operate in the temperature range from 300 K down to 4.
2 K without reduction of current gain. This device suffers much less f
rom carrier freeze out than conventional bipolar transistors with p-n
junction based emitters. This is because the gain of the tunnel MOS em
itter transistor relies on the asymmetry of electron/hole quantum mech
anical tunneling which is almost temperature independent. The results
illustrating the effect of magnetic fields of up to 9 T an the perform
ance of this transistor are also presented. Due to its satisfactory lo
w-temperature operation and other interesting properties, the tunnel M
OS emitter transistor is a promising bipolar component for cryoelectro
nics. (C) 1998 Elsevier Science Ltd. All rights reserved.