ROOM-TEMPERATURE OZONE SENSING WITH KI LAYERS INTEGRATED IN HSGFET GAS SENSORS

Authors
FUCHS A BOGNER M DOLL T EISELE I
Citation
A. Fuchs et al., ROOM-TEMPERATURE OZONE SENSING WITH KI LAYERS INTEGRATED IN HSGFET GAS SENSORS, Sensors and actuators. B, Chemical, 48(1-3), 1998, pp. 296-299
Citations number
9
Categorie Soggetti
Electrochemistry,"Chemistry Analytical","Instument & Instrumentation
Journal title
Sensors and actuators. B, Chemical → ACNP
ISSN journal
09254005
Volume
48
Issue
1-3
Year of publication
1998
Pages
296 - 299
Database
ISI
SICI code
0925-4005(1998)48:1-3<296:ROSWKL>2.0.ZU;2-P
Abstract
Hybrid suspended gate FET (HSGFET) with a thin potassium iodide (KI) s ensitive layer were proven to be well suited as a reproducible ozone s ensor operating at room temperature with an excellent resolution in th e low ppb region. The impact of humidity limits the applicability of t he sensor to moderate ambient conditions. (C) 1998 Elsevier Science S. A. All rights reserved.