SINGLE-MODE OPERATION IN AN ANTIGUIDED VERTICAL-CAVITY SURFACE-EMITTING LASER USING A LOW-TEMPERATURE-GROWN ALGAAS DIELECTRIC APERTURE

Authors
OH TH SHCHEKIN OB DEPPE DG
Citation
Th. Oh et al., SINGLE-MODE OPERATION IN AN ANTIGUIDED VERTICAL-CAVITY SURFACE-EMITTING LASER USING A LOW-TEMPERATURE-GROWN ALGAAS DIELECTRIC APERTURE, IEEE photonics technology letters, 10(8), 1998, pp. 1064-1066
Citations number
13
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
10
Issue
8
Year of publication
1998
Pages
1064 - 1066
Database
ISI
SICI code
1041-1135(1998)10:8<1064:SOIAAV>2.0.ZU;2-A
Abstract
Data are presented on a single mode vertical-cavity surface-emitting l aser that uses a low temperature growth of a highly resistive AlGaAs d ielectric aperture, An epitaxial regrowth is used to contact the laser active region, with the AlGaAs aperture resulting in cavity-induced a ntiguiding. Antiguiding is observed in 6-mu m diameter devices, with s ingle-mode operation obtained over the range of continuous-wave operat ion (about 8x threshold). Pulsed operation shows lowest order transver se mode profiles up to 24x threshold.