LOW-DAMAGE DRY-ETCHED GRATING ON AN MQW ACTIVE LAYER AND DISLOCATION-FREE INP REGROWTH FOR 1.55-MU-M COMPLEX-COUPLED DFB LASERS FABRICATION

Authors
TALNEAU A BOUADMA N LEBELLEGO Y SLEMPKES S OUGAZZADEN A PATRIARCHE G SERMAGE B
Citation
A. Talneau et al., LOW-DAMAGE DRY-ETCHED GRATING ON AN MQW ACTIVE LAYER AND DISLOCATION-FREE INP REGROWTH FOR 1.55-MU-M COMPLEX-COUPLED DFB LASERS FABRICATION, IEEE photonics technology letters, 10(8), 1998, pp. 1070-1072
Citations number
2
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
10
Issue
8
Year of publication
1998
Pages
1070 - 1072
Database
ISI
SICI code
1041-1135(1998)10:8<1070:LDGOAM>2.0.ZU;2-1
Abstract
A grating dry-etched through the upper wells of a multiquantum-well ac tive layer has been characterized before and after regrowth. TEM obser vation and carrier lifetime measurements have shown growth-free defect s of the epitaxial layers, As a consequence, quasi-100% monomode oscil lation on lambda + 1 mode has been achieved on complex-coupled distrib uted-feedback lasers fabricated with such grating.