LONG-WAVELENGTH STRAINED-QUANTUM-WELL LASERS OSCILLATING UP TO 210 DEGREES-C ON INGAAS TERNARY SUBSTRATES

Long-wavelength InGaAs-InAlGaAs strained quantum-well lasers have been fabricated on In0.22Ga0.78As ternary substrates grown by the Bridgman method. The threshold current density and lasing wavelength at 20 deg rees C are 245 A/cm(2) and 1.226 mu m, respectively, The device has la sed up to 210 degrees C, which is the highest operating temperature ev er reported for long-wavelength semiconductor lasers, The temperature sensitivity of the slope efficiency between 20 degrees C and 120 degre es C is only -0.0051 dB/K, showing suppressed carrier overflow owing t o deep potential quantum wells. These high-temperature durabilities of this laser are fascinating features for application to optical subscr iber and optical interconnection systems.