Simplified antiresonant-reflective-optical-waveguide distributed-feedb
ack semiconductor lasers based on Al-free InGaAs-InGaAsP-InGaP materia
ls are reported for the first time. Devices with 6.5-mu m-wide emittin
g apertures operate single-frequency (lambda = 0.968 mu m) and single-
spatial-mode to 157-mW continuous-wave output power. The full-width at
half-maximum of the lateral far-field pattern is 4.5 degrees, in exce
llent agreement with theory, Relative intensity noise values as low as
-154 dB/Hz are measured between 500 MHz and 8 GHz.