K. Takahata et al., 46.5-GHZ-BANDWIDTH MONOLITHIC RECEIVER OEIC CONSISTING OF A WAVE-GUIDE P-I-N PHOTODIODE AND A HEMT DISTRIBUTED-AMPLIFIER, IEEE photonics technology letters, 10(8), 1998, pp. 1150-1152
A large bandwidth monolithically integrated photoreceiver for 1.55-mu
m wavelength operation was fabricated using a stacked structure of wav
eguide p-i-n photodiode layers and InAlAs-InGaAs high-electron mobilit
y transistor (HEMT) layers grown using a single-step metal-organic vap
or-phase epitaxy. The monolithic receiver optoelectronic integrated ci
rcuit (OEIC) consists of a waveguide p-i-n photodiode with a high resp
onsivity of 0.5 A/W and a HEMT distributed amplifier. It has a bandwid
th of 46.5 GHz, which is the largest yet reported for a long-wavelengt
h receiver OEIC, and exhibits a clear eye opening at 40 Gb/s. This exc
ellent performance is very attractive for use in high-speed optical tr
ansmission systems and millimeter-wave fiber-radio systems.