46.5-GHZ-BANDWIDTH MONOLITHIC RECEIVER OEIC CONSISTING OF A WAVE-GUIDE P-I-N PHOTODIODE AND A HEMT DISTRIBUTED-AMPLIFIER

A large bandwidth monolithically integrated photoreceiver for 1.55-mu m wavelength operation was fabricated using a stacked structure of wav eguide p-i-n photodiode layers and InAlAs-InGaAs high-electron mobilit y transistor (HEMT) layers grown using a single-step metal-organic vap or-phase epitaxy. The monolithic receiver optoelectronic integrated ci rcuit (OEIC) consists of a waveguide p-i-n photodiode with a high resp onsivity of 0.5 A/W and a HEMT distributed amplifier. It has a bandwid th of 46.5 GHz, which is the largest yet reported for a long-wavelengt h receiver OEIC, and exhibits a clear eye opening at 40 Gb/s. This exc ellent performance is very attractive for use in high-speed optical tr ansmission systems and millimeter-wave fiber-radio systems.