HIGH-RESOLUTION X-RAY-SCATTERING INVESTIGATION OF PT LAF3/SI(111) STRUCTURES/

Citation
Ss. Fanchenko et al., HIGH-RESOLUTION X-RAY-SCATTERING INVESTIGATION OF PT LAF3/SI(111) STRUCTURES/, Physica. B, Condensed matter, 248, 1998, pp. 48-52
Citations number
8
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09214526
Volume
248
Year of publication
1998
Pages
48 - 52
Database
ISI
SICI code
0921-4526(1998)248:<48:HXIOPL>2.0.ZU;2-Y
Abstract
Recently developed high resolution X-ray methods have been used to cha racterize the structure of Pt/LaF3/Si samples. The asymptotic Bragg di ffraction is used for the study of the LaF3/Si interface and the grazi ng-incidence X-ray diffraction (GIXD) for the study of the LaF3, textu re. The LaF3/Si interface was found to be thin and smooth with the int erface thickness value 0.55 +/- 0.1 nm. The essential extra-broadening of the main peak in diffraction experiments for samples with the top platinum layer is explained by the small angle scattering of the X-ray beam on the rough Pt film. The LaF3-film domain structure is derived from GIXD data. (C) 1998 Elsevier Science B.V. All rights reserved.