AN X-RAY-DIFFRACTION STUDY OF DIRECT-BONDED SILICON INTERFACES - A MODEL SEMICONDUCTOR GRAIN-BOUNDARY

Authors
HOWES PB BENAMARA M GREY F FEIDENHANSL R NIELSEN M RASMUSSEN FB BAKER J
Citation
Pb. Howes et al., AN X-RAY-DIFFRACTION STUDY OF DIRECT-BONDED SILICON INTERFACES - A MODEL SEMICONDUCTOR GRAIN-BOUNDARY, Physica. B, Condensed matter, 248, 1998, pp. 74-78
Citations number
12
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica. B, Condensed matter → ACNP
ISSN journal
09214526
Volume
248
Year of publication
1998
Pages
74 - 78
Database
ISI
SICI code
0921-4526(1998)248:<74:AXSODS>2.0.ZU;2-H
Abstract
Semiconductor wafer bonding techniques have been used to create a gian t twist grain boundary from two Si(001) wafers. We show, using X-ray d iffraction measurements that after annealing the interface forms a hig hly ordered superstructure with relaxations extending to many layers i nto the crystals on either side of the interface. (C) 1998 Elsevier Sc ience B.V. All rights reserved.