ON THE INTERFACE STRAIN DISTRIBUTION IN SI-ON-SAPPHIRE SYSTEM

Authors
GARTSTEIN E LACH S MOGILYANSKI D METZGER H PEISL J
Citation
E. Gartstein et al., ON THE INTERFACE STRAIN DISTRIBUTION IN SI-ON-SAPPHIRE SYSTEM, Physica. B, Condensed matter, 248, 1998, pp. 79-82
Citations number
5
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica. B, Condensed matter → ACNP
ISSN journal
09214526
Volume
248
Year of publication
1998
Pages
79 - 82
Database
ISI
SICI code
0921-4526(1998)248:<79:OTISDI>2.0.ZU;2-1
Abstract
Strain distribution in Si-on-sapphire (SOS) heterostructure was assess ed using the experimentally determined in-plane and out-of-plane strai n values. The calculation is performed in the frame of the biaxial str ain model. Similar strain distributions were observed for the SOS samp les obtained from different sources. (C) 1998 Elsevier Science B.V. Al l rights reserved.