X-RAY-DIFFRACTION AND REFLECTOMETRY STUDIES OF POROUS SILICON - N-TYPE LAYERS AND HOLOGRAPHIC GRATINGS

X-ray diffraction and reflectometry allows the measurements of various parameters (thickness, porosity, roughness and strain) of thin layers of porous silicon. Measurements on n-type porous silicon layers of di fferent doping give very different results: for lightly doped samples, the layer properties vary smoothly as a function of formation time, w hile for heavily doped samples several regimes are observed for short formation times. X-ray satellites have been observed in the X-ray refl exion or diffraction from holographic gratings. (C) 1998 Elsevier Scie nce B.V. All rights reserved.