We have studied the effect of low-energy ion beam etching of silicon (
1 0 0) substrates on the magneto-transport and structural properties o
f sputter deposited cobalt/copper multilayers. The films had a nominal
structure of 16{1 nm Co/2.1 nm Cu} + 1 nm Pt placing them on the sec
ond peak of the oscillatory coupling curve. We show that, as the etchi
ng energy is increased from 0 to 1500 eV, the giant magnetoresistance
(GMR) decreases from about 19% to about 1%. This is attributed to subt
le changes in the him microstructure causing the destruction of antife
rromagnetic coupling between the magnetic layers. We present reflectiv
ity and X-ray diffraction data which suggest that Fermi surface effect
s in the bulk drive the changes in GMR. However, we conclude that spin
-dependent scattering at the interfaces may yet be a significant facto
r and suggest that the interfacial structure be examined more closely
using diffuse reflectivity techniques. (C) 1998 Elsevier Science B.V.
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