FORMATION OF IN-O FILMS BY AR-BEAM-ASSISTED REACTIVE DEPOSITION( ION)

The electrical resistivity and transmissivity of In-O films prepared b y Ar+ ion beam assisted reactive deposition were investigated. In this process, Ar+ ion beam irradiation with an energy of 10 keV was carrie d out simultaneously during In evaporation in an O-2 atmosphere. The I n-O films prepared at several Ar+ ion current densities of 3-20 mu A c m(-2) showed a polycrystalline structure in the XRD measurement, which had a strongly preferred orientation of In2O3 (110). However, the XRD pattern of the In-O film prepared without Ar+ ion beam assistance cor responding to a reactive evaporation method showed a broad peak of In (101). Resistivity and transmissivity of this film prepared without Ar + ion assist were 7.0 x 10(-4) Omega cm and about 35%, respectively. T he resistivity of the film prepared with an Ar+ ion current density of 20 mu A cm(-2) increased to 0.05 Omega cm, while the transmissivity a lso increased to 80%. It is considered that the relationship of resist ivity and transmissivity was dependent on the film composition and str ucture controlled by Ar+ ion irradiation. (C) 1998 Published by Elsevi er Science S.A.