XPS INVESTIGATION OF ALN FORMATION IN ALUMINUM-ALLOYS USING PLASMA SOURCE ION-IMPLANTATION

Aluminum alloys AlMgSil and AlSi7 have been implanted with nitrogen io ns by means of the plasma immersion ion implantation technique. The sa mples have been characterized by X-ray photoelectron spectroscopy. Al 2p and N 1s signals could be separated into sub-peaks, corresponding t o differently bound states, dependent on the depth below the sample su rface and the oxygen concentration. AIN was formed in all implanted sa mples. An enhancement of the oxygen signal arose in the range between the AIN and metallic aluminum signals. The alloying elements magnesium and silicon showed a strong radiation-enhanced effect of segregation. (C) 1998 Elsevier Science S.A.