Technical semi-hard aluminium (99.5wt.% Al) was implanted with nickel
at 200 keV (T-impl less than or equal to 200 degrees C) and 1 MeV (T-i
mpl less than or equal to 50 degrees C). The chosen doses resulted in
maximum nickel concentrations of 22-32 at.% and 20-45 at.% for implant
ation at 200 keV and 1 MeV, respectively. The as-implanted microstruct
ure was characterized by an essentially amorphous matrix with nanocrys
talline precipitates of NiAl3 and NiAl. The size of the NIAl3 precipit
ates was in the order of 5-10 nm. For the 200 keV implantation formati
on of NiAl was observed for all samples with typical particle sizes al
so of 5-10 nm. After implantation at 1 MeV, NiAl was only observed for
maximum nickel concentrations >30 at,%, but with larger precipitates
of 40 +/- 20 nm. The occurrence of NiAl was explained by the higher re
sistance against radiation damage of NiAl compared with NiAl3. By anne
aling at 400 degrees C in both sample series a buried continuous layer
of NiAl3 was formed. The metastable NiAl precipitates disappeared. An
nealing at 600 degrees C led to the growth of large NiAl3 grains with
typical dimensions up to the micrometre range. A significant wear redu
ction by a factor of about 20 was observed for the 200 keV samples wit
h the deep nickel distribution obtained by annealing at 600 degrees C
as well as for the as-implanted state of 1 MeV implantation with high
doses resulting in maximum nickel concentrations >40 at.%. (C) 1998 El
sevier Science S.A.