PHOTOLUMINESCENCE STUDY OF GAN INGAN MULTIQUANTUM-WELL STRUCTURES AT ROOM-TEMPERATURE/

The room temperature photoluminescence (PL) of InGaN-based multiple qu antum well (MQW) structures was studied. The PL intensity was signific antly dependent on the well width and depth. The maximum PL intensity from an MQW with In0.15Ga0.85N wells was produced for a 2 nm well. the intensity decreased significantly for thinner and thicker ones. Also, the PL intensity increased exponentially with the energy band gap dif ference between well and barrier layers. A deep well was effective for the improvement of luminescence efficiency. (C) 1998 Elsevier Science B.V. All rights reserved.