EFFECTIVE-MASS MEASUREMENT IN 2-DIMENSIONAL HOLE GAS IN STRAINED SI1-X-YGEXCY SI(100) MODULATION-DOPED HETEROSTRUCTURES/

Authors
CHANG CL SHUKLA SP PAN W VENKATARAMAN V STURM JC SHAYEGAN M
Citation
Cl. Chang et al., EFFECTIVE-MASS MEASUREMENT IN 2-DIMENSIONAL HOLE GAS IN STRAINED SI1-X-YGEXCY SI(100) MODULATION-DOPED HETEROSTRUCTURES/, Thin solid films, 321, 1998, pp. 51-54
Citations number
11
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
321
Year of publication
1998
Pages
51 - 54
Database
ISI
SICI code
0040-6090(1998)321:<51:EMI2HG>2.0.ZU;2-I
Abstract
A two-dimensional hole gas in the Si1-x-yGexCy channel on a Si(100) su bstrate has been demonstrated at temperatures from 0.3 to 300 K. The h ole mobility decreases as more C is added. The hole effective mass has also been measured based on the analysis of the temperature dependenc e of Shubnikov-de Haas oscillations. It is found that the addition of C, up to 0.6%, does nor change the effective mass of holes in Si1-xGex . It suggests that the valence band structure of Si1-x-yGexCy is simil ar to that of Si1-xGex. (C) 1998 Elsevier Science S.A. All rights rese rved.