BIMODAL HEIGHT DISTRIBUTION OF SELF-ASSEMBLED GERMANIUM ISLANDS GROWNON SI0.84GE0.16 PSEUDO-SUBSTRATES

Citation
Ev. Pedersen et al., BIMODAL HEIGHT DISTRIBUTION OF SELF-ASSEMBLED GERMANIUM ISLANDS GROWNON SI0.84GE0.16 PSEUDO-SUBSTRATES, Thin solid films, 321, 1998, pp. 92-97
Citations number
33
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
321
Year of publication
1998
Pages
92 - 97
Database
ISI
SICI code
0040-6090(1998)321:<92:BHDOSG>2.0.ZU;2-P
Abstract
We have investigated the size distribution of germanium islands deposi ted onto a Si0.84Ge0.16 buffer layer, by atomic force microscopy. The size distribution was found to be bimodal at 630-740 degrees C and con sisted of one group of smaller 'pyramidal' islands with a broad distri bution of diameters and heights and another group of larger 'spherical ' islands with a narrow distribution of diameters and heights. Both th e size of the islands and the critical size for the change-over betwee n the two growth modes are strongly temperature-dependent and decrease with decreasing temperature. To explain the origin of this bimodality , we have conducted experiments where the amount of material and the t emperature were varied. We suggest that the bimodal size distribution and the temperature-dependent change-over between the two growth modes can be explained by an interplay between energetics and kinetics. (C) 1998 Elsevier Science S.A. All rights reserved.