Cross-sectional transmission electron microscopy and Raman spectra are
used to investigate the effect of monolayer Sb as a surfactant on the
inner diffusion of epilayer Ge atoms into Si substrate. Without Sb, i
nner diffusion of the epilayer Ge atoms into the Si substrate occurs,
resulting in a severe intermixing of atoms at the Ge-Si interface. Wit
h the presence of Sb as a surfactant, the inner diffusion of epitaxial
Ge atoms into the Si substrate is greatly suppressed. This result is
explained in terms of the strain relief in the Si substrate by the Sb
surfactant. (C) 1998 Elsevier Science S.A. All rights reserved.