Wx. Ni et al., ROLE OF STRAIN IN DOPANT SURFACE SEGREGATION DURING SI AND SIGE GROWTH BY MOLECULAR-BEAM EPITAXY, Thin solid films, 321, 1998, pp. 131-135
Dopant surface segregation during molecular beam epitaxy (MBE) growth
is a serious problem for controlling the doping profiles. To understan
d the segregation mechanism is essential. In this study, we report the
B segregation ratio values, determined using concentration transient
analysis based on secondary ion mass spectrometry (SIMS) measurements,
for Si and SiGe, respectively. For a comparison, segregation ratio ca
lculations based on a simplified two-site exchange model were performe
d. It is found that the surface segregation effects of B and Ge during
MBE Si growth are interconnected, where the lattice strain likely pla
ys an important role. (C) 1998 Elsevier Science S.A. All rights reserv
ed.