SILICON-GERMANIUM HETEROSTRUCTURES IN ELECTRONICS - THE PRESENT AND THE FUTURE

Authors
Citation
Dj. Paul, SILICON-GERMANIUM HETEROSTRUCTURES IN ELECTRONICS - THE PRESENT AND THE FUTURE, Thin solid films, 321, 1998, pp. 172-180
Citations number
56
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
321
Year of publication
1998
Pages
172 - 180
Database
ISI
SICI code
0040-6090(1998)321:<172:SHIE-T>2.0.ZU;2-N
Abstract
A review is presented of Si/Si1-xGex heterostructures which may be use d for electronic transistors along with more exotic designs of electri cal devices including quantum effect devices. Important issues includi ng integration of the devices with present technology along with defec t problems will be presented. The final section will explore exotic qu antum devices and review the potential for different SiGe devices to r each the market place. (C) 1998 Elsevier Science S.A. All rights reser ved.