A review is presented of Si/Si1-xGex heterostructures which may be use
d for electronic transistors along with more exotic designs of electri
cal devices including quantum effect devices. Important issues includi
ng integration of the devices with present technology along with defec
t problems will be presented. The final section will explore exotic qu
antum devices and review the potential for different SiGe devices to r
each the market place. (C) 1998 Elsevier Science S.A. All rights reser
ved.