BISTABLE DIODES GROWN BY SILICON MOLECULAR-BEAM EPITAXY

Si devices with two double delta-doped tone p-delta and one n-delta) j unctions were grown by silicon molecular beam epitaxy (MBE). A new I-V bistability phenomenon was observed in those devices. We used a 'band switching' mechanism to explain the bistability. Devices with differe nt doping and spacer widths were grown to test the proposed mechanism. Finally, a detailed temperature dependence measurement of the I-V cha racteristics was shown to confirm our proposed mechanism. (C) 1998 Els evier Science S.A. All rights reserved.