ELECTRIC-FIELD TAILORING IN MBE-GROWN VERTICAL SUB-100 NM MOSFETS

Authors
HANSCH W RAO VR FINK C KAESEN F EISELE I
Citation
W. Hansch et al., ELECTRIC-FIELD TAILORING IN MBE-GROWN VERTICAL SUB-100 NM MOSFETS, Thin solid films, 321, 1998, pp. 206-214
Citations number
19
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
321
Year of publication
1998
Pages
206 - 214
Database
ISI
SICI code
0040-6090(1998)321:<206:ETIMVS>2.0.ZU;2-1
Abstract
We introduce the concept of electric-field-tailoring in MBE-grown vert ical metal-oxide semiconductor field-effect transistors (MOS-FETs) and show that significant improvements in terms of supply voltage, curren t and speed are achievable in such MOSFETs by employing a planar-doped -barrier MOSFET (PDBFET) concept. Investigation of electrical characte ristics and carrier transport in sub-100 nm channel PDBFETs shows the predicted improvements compared with classical MOSFETs. (C) 1998 Elsev ier Science S.A. All rights reserved.