INCORPORATION AND LUMINESCENCE PROPERTIES OF ER2O3 AND ERF3 DOPED SI LAYERS GROWN BY MOLECULAR-BEAM EPITAXY

Er doped Si layer structures have been grown using Er2O3 Or ErF3 as ev aporation source materials during Si molecular beam epitaxy. By using a low temperature growth process, an Er doping level of similar to 5 x 10(19)/cm(3) has been achieved without precipitation. Structural and luminescence properties of these Er/O and Er/F doped Si samples have b een studied. Electroluminescence (1.54 mu m) has been observed from Er /O doped Si layers at room temperature through hot electron impact exc itation. Comparison of the photo- and electroluminescence of these Er- doped Si structures has been made. The major thermal quenching behavio rs of both luminescence emissions are characterized by the same activa tion energy value of similar to 160 meV, but different on-set temperat ures. (C) 1998 Elsevier Science S.A. All rights reserved.