SELF-ORDERING OF COSI2 PRECIPITATES AND EPITAXIAL LAYER GROWTH OF COSI2 ON SI(100)

In this paper we present recent investigations on the growth of buried single crystalline CoSi2 layers in Si(100) by molecular beam allotaxy . By this growth method the layer formation takes place during a rapid high temperature anneal of silicide precipitates embedded in the Si(1 00) matrix. During the anneal the precipitates coarsen and coalesce in to a uniform layer. The results show that, under certain conditions, s elf-ordering of the precipitates evolves during the anneal in accordan ce with recent computer simulation. (C) 1998 Elsevier Science S.A. All rights reserved.