The results of the investigation of growth processes of metal films, a
morphous silicon films and diamond-like carbon films by in situ X-ray
monitoring of reflectivity at the wavelength 1.54 A were presented. Th
e films were obtained by magnetron sputtering and rf-plasma-enhanced c
hemical vapour deposition. The growth rate, thickness, density and rou
ghness of films were calculated from the time dependence of reflectivi
ty. (C) 1998 Elsevier Science S.A. All rights reserved.