IN-SITU X-RAY-INVESTIGATIONS OF THIN-FILM GROWTH

Citation
Am. Baranov et If. Mikhailov, IN-SITU X-RAY-INVESTIGATIONS OF THIN-FILM GROWTH, Thin solid films, 324(1-2), 1998, pp. 63-67
Citations number
11
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
324
Issue
1-2
Year of publication
1998
Pages
63 - 67
Database
ISI
SICI code
0040-6090(1998)324:1-2<63:IXOTG>2.0.ZU;2-N
Abstract
The results of the investigation of growth processes of metal films, a morphous silicon films and diamond-like carbon films by in situ X-ray monitoring of reflectivity at the wavelength 1.54 A were presented. Th e films were obtained by magnetron sputtering and rf-plasma-enhanced c hemical vapour deposition. The growth rate, thickness, density and rou ghness of films were calculated from the time dependence of reflectivi ty. (C) 1998 Elsevier Science S.A. All rights reserved.