PREPARATION AND FERROELECTRIC PROPERTIES OF BATIO3 THIN-FILMS BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION

Ferroelectric BaTiO3 thin films have been prepared at atmospheric pres sure on Si substrate by Metalorganic Chemical Vapor Deposition (MOCVD) . Ba(DPM)(2) and titanium isopoproxide (TIP) were used as metalorganic source. The microstructure and composition of the thin films were stu died by XRD, SEM and EPMA, respectively. The prepared films at a subst rate temperature of 700 degrees C on Si substrate showed polycrystalli ne structure with smooth and uniform surface. The films have fully tex tured with (001)-orientation after rapid thermal annealing, and have a dielectric constant (epsilon) of 107 and the dissipation factor (tan delta) of 0.08. The films exhibited remanent polarization (P-r) of 2.0 mu C cm(-1), and coercive field (E-c) of 4.0 kV cm(-1), from the P-E hysteresis loop observation. The influence of substrate and stress to the physical properties of the films was mainly discussed. A dispersiv e Curie peak and the low-temperature-shifted Curie temperature were ob tained from the epsilon-T curve, due to the existence of tensile stres s on the films. (C) 1998 Elsevier Science S.A. All rights reserved.