ZnxCd1-xS (0 less than or equal to x less than or equal to 1) thin fil
ms have been deposited by the dip technique on glass substrates. In th
is method, a clean substrate was dipped into an alcoholic solution of
the corresponding nitrates and thiourea and then withdrawn vertically
at a controlled speed, and finally baked in a furnace. X-ray diffracto
metric study suggests that for zinc atomic fraction x less than or equ
al to 0.6 films prepared at a baking temperature of 500 degrees C are
homogeneous with a hexagonal (wurtzite) structure. Increase in the pro
portion of zinc in the starting solution is found to produce a decreas
e in the lattice parameter. SEM studies reveal an increase in grain si
ze with x up to a value of 0.6. For x > 0.6, the films appear to have
an amorphous character, as no distinguishable peaks can be seen in the
X-ray diffractograms. The SEM micrographs also do not show any clearl
y defined grains over this range. Values of bandgap obtained from opti
cal absorption measurements as well as from spectral response of photo
conductivity are in good agreement with each other and vary monotonica
lly from 2.30 eV (CdS) to 2.69 eV (Zn0.6Cd0.4S) over the range 0 less
than or equal to x less than or equal to 0.6. (C) 1998 Elsevier Scienc
e S.A. All rights reserved.