PULSED-LASER DEPOSITION OF BISMUTH IN THE PRESENCE OF DIFFERENT AMBIENT ATMOSPHERES

Bismuth thin films have been deposited at 200 degrees C on glass subst rates using the pulsed laser deposition (PLD) technique with a high en ergy density (8 J/cm(2)). Influences on the film morphologies, topogra phies and crystallographic structures of different background atmosphe res during deposition (vacuum, low He or N-2 pressures (10(-6)-10(-7) mbar)) introduced in the chamber either in a dynamic way or under stat ic conditions were investigated. Film growth is processed differently, depending on ambient atmosphere. Well-crystallized, polycrystalline b ismuth films presenting completely random-oriented crystallites are ob tained whereas more conventional deposition techniques favour c-axis o rientation. (C) 1998 Elsevier Science S.A. All rights reserved.