EPITAXIAL-GROWTH WITH PHOSPHORUS - 4 - APPLICATION OF DICHLORO-T-BUTYLPHOSPHINE TO CVD PROCESSES - THE THERMAL CHEMICAL-VAPOR-DEPOSITION FORMATION OF COPPER PHOSPHIDE THIN-FILMS AND ETCHING OF INDIUM-PHOSPHIDEBY DICHLORO-T-BUTYLPHOSPHINE

The potential application of dichloro-t-butylphosphine (DCTBP) as a ph osphorus source compound for InP growth is explored. Experiments emplo ying DCTBP with trimethylindium were, however, unsuccessful in prepari ng InP thin films but rather resulted in the efficient etching of the InP substrate. An InP etching rate of 73.4 Angstrom/s was observed wit h an InP substrate temperature of approximately 600 degrees C. A possi ble mechanism is presented to account for these observations. In addit ion, crystalline copper phosphide (Cu3P) thin films were formed from t he thermal surface reaction of copper metal and DCTBP. The films are c haracterized by scanning electron microscopy (SEM) and X-ray diffracti on (XRD) techniques. (C) 1998 Elsevier Science S.A. All rights reserve d.