THE FORMATION OF COPPER SULFIDE SEMICONDUCTORS INSIDE LANGMUIR-BLODGETT-FILMS OF CU(II) ION COMPLEXES

Citation
Pj. Werkman et al., THE FORMATION OF COPPER SULFIDE SEMICONDUCTORS INSIDE LANGMUIR-BLODGETT-FILMS OF CU(II) ION COMPLEXES, Thin solid films, 323(1-2), 1998, pp. 251-256
Citations number
28
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
323
Issue
1-2
Year of publication
1998
Pages
251 - 256
Database
ISI
SICI code
0040-6090(1998)323:1-2<251:TFOCSS>2.0.ZU;2-D
Abstract
The fabrication of layers of copper sulphide within multilayers of cop per complexes of the amphiphile 4-(10,12-pentacosadiynamido methyl)pyr idine, by diffusion of H2S into the multilayers, was studied by W-VIS spectroscopy. XPS measurements revealed that copper sulphides can be s ynthesised which differ in stoichiometry when multilayers are used, wh ich were built up from different subphases (CuCl2 or Cu(ClO4)(2)). The distinct layer pattern of the Langmuir-Blodgett (LB) films is preserv ed during the formation of the copper sulphide layers and the bilayer distance increases slightly by about 1.8 Angstrom for the multilayers built up from a 5 mM CuCl2 subphase, whereas for the multilayers built up from a 5 mM Cu(ClO4)(2) subphase the bilayer distance decreases a little by about 0.6 Angstrom after the formation of copper sulphide in side these LB films. After polymerisation the multilayer structure is destroyed in the case of LB films built up from the CuCl2 subphase, wh ereas the layer structure is preserved during the polymerisation proce ss in the case of multilayers built up from a 5 mM Cu(ClO4)(2) subphas e. (C) 1998 Elsevier Science S.A. All rights reserved.