Vs. Lysenko et al., THERMALLY STIMULATED CHARACTERIZATION OF SHALLOW TRAPS IN THE SIC SI HETEROJUNCTION/, Journal of physics. D, Applied physics, 31(13), 1998, pp. 1499-1503
The thermally stimulated charge release (TSCR) technique was used for
investigations of shallow traps in SiC/Si heterojunctions. The TSCR cu
rrents were found to consist of two parts manifested in different temp
erature ranges. The lower-temperature peak, with the maximum at about
15 K, was attributed to the shallow traps situated in the thin transit
ion layer at the SiC/Si interface and was similar to that observed for
the SiO2/Si interface. Activation energies of the release process are
in the range 18-55 meV. The broad higher-temperature peak, associated
with the deeper electron traps located in the SIC layer, was observed
in the temperature range 40-160 K. The activation energies of these t
raps lie in the range 0.016-0.22 eV.