THERMALLY STIMULATED CHARACTERIZATION OF SHALLOW TRAPS IN THE SIC SI HETEROJUNCTION/

The thermally stimulated charge release (TSCR) technique was used for investigations of shallow traps in SiC/Si heterojunctions. The TSCR cu rrents were found to consist of two parts manifested in different temp erature ranges. The lower-temperature peak, with the maximum at about 15 K, was attributed to the shallow traps situated in the thin transit ion layer at the SiC/Si interface and was similar to that observed for the SiO2/Si interface. Activation energies of the release process are in the range 18-55 meV. The broad higher-temperature peak, associated with the deeper electron traps located in the SIC layer, was observed in the temperature range 40-160 K. The activation energies of these t raps lie in the range 0.016-0.22 eV.