REVERSE SHORT-CHANNEL EFFECT IN SILICON MOSFET OPERATED AT LOW-TEMPERATURE

Authors
SZELAG B BALESTRA F GHIBAUDO G
Citation
B. Szelag et al., REVERSE SHORT-CHANNEL EFFECT IN SILICON MOSFET OPERATED AT LOW-TEMPERATURE, Journal de physique. IV, 8(P3), 1998, pp. 9-12
Citations number
10
Categorie Soggetti
Physics
Journal title
Journal de physique. IV → ACNP
ISSN journal
11554339
Volume
8
Issue
P3
Year of publication
1998
Pages
9 - 12
Database
ISI
SICI code
1155-4339(1998)8:P3<9:RSEISM>2.0.ZU;2-5
Abstract
The Reverse Short Channel Effect (RSCE) is a major issue for deep subm icronic CMOS technologies. In this paper we show using low temperature experiment that RSCE arises from an excess doping concentration near source and drain as supported from both analytical modelling and 2D nu merical simulation.