A THOROUGH ANALYSIS OF SELF-HEATING EFFECTS FOR SOI MOSFETS ON SIMOX AND UNIBOND SUBSTRATES

The impact of the self heating effect (SH) on the low temperature oper ation of MOSFET/SOI is investigated with the help of a simple self hea ting model. Both the SIMOX and UNIBOND substrates are analyzed. The va riation with temperature of the buried oxide thermal conductivity extr acted from the thermal resistance is found to be in good agreement wit h the experimental data for fused silica. The influence of the depleti on of the thin Si film is carefully analysed and the existence of an o ptimum substrate temperature is demonstrated allowing better device pe rformance to be achieved.