BACK GATE VOLTAGE AND BURIED-OXIDE THICKNESS INFLUENCES ON THE SERIESRESISTANCE OF FULLY DEPLETED SOI MOSFETS AT 77 K

Authors
NICOLETT AS MARTINO JA SIMOEN E CLAEYS C
Citation
As. Nicolett et al., BACK GATE VOLTAGE AND BURIED-OXIDE THICKNESS INFLUENCES ON THE SERIESRESISTANCE OF FULLY DEPLETED SOI MOSFETS AT 77 K, Journal de physique. IV, 8(P3), 1998, pp. 25-28
Citations number
11
Categorie Soggetti
Physics
Journal title
Journal de physique. IV → ACNP
ISSN journal
11554339
Volume
8
Issue
P3
Year of publication
1998
Pages
25 - 28
Database
ISI
SICI code
1155-4339(1998)8:P3<25:BGVABT>2.0.ZU;2-D
Abstract
This work studies the influence of the back gate voltage on the LDD SO I nMOSFETs series resistance at 300 K and 77 K and corresponding to tw o different buried oxide thicknesses. The MEDICI simulated results wer e used to support the analysis. It was observed that for lower buried oxide thickness the influence of the back gate bias is higher, mainly at 77 K. However, this influence becomes negligible when the back inte rface below the LDD region is inverted and the depletion region in the LDD reaches its maximum saturation value.