CRYOGENIC OPERATION OF HEAVY-ION IMPLANTED N-CHANNEL AND P-CHANNEL MOSFET

Authors
SZELAG B SKOTNICKI T BALESTRA F
Citation
B. Szelag et al., CRYOGENIC OPERATION OF HEAVY-ION IMPLANTED N-CHANNEL AND P-CHANNEL MOSFET, Journal de physique. IV, 8(P3), 1998, pp. 37-40
Citations number
4
Categorie Soggetti
Physics
Journal title
Journal de physique. IV → ACNP
ISSN journal
11554339
Volume
8
Issue
P3
Year of publication
1998
Pages
37 - 40
Database
ISI
SICI code
1155-4339(1998)8:P3<37:COOHIN>2.0.ZU;2-H
Abstract
The low temperature operation of heavy ion implanted P- and N-channel MOSFETs is investigated. The behaviors of the transconductance, transf er and output characteristics, short channel and hot carrier effects a s well as parasitic phenomena are thoroughly analyzed for deep submicr on devices.